In this project we are seeking to harness the effects of 2d plasmons for high frequency (GHz to THz) electronic devices, including detectors, mixers, oscillators, an possibly amplifiers.  The geometry of the devices is identical to that of a HEMT, or high-electron mobility transistor. However, the 2d plasmon is important only when the operating frequency is much higher than the scattering frequency of electrons in the semiconductor. At room temperatures, this frequency is roughly 500 GHz, so the devices we ultimately hope to build will have operating frequencies in the THz (1000 GHz) range. This is being done in an informal collaboration with TRW electronics. In the near term, we are investigating the non-linear effects of 2d plamsons at very low (cryogenic) temperatures, where the scattering frequency of the electrons is dramatically decreased. Using semiconductor crystals grown by our collaborators at Lucent Technologies (L.N. Pfeiffer and K.W. West), we are able to measure samples where the scattering frequency is less than 1 GHz, thus enhancing the 2d plasmon effects we are attempting to study and harness for useful devices. The semiconductor materials we are studying are based on GaAs and InP materials.

To learn more view some of my slides in .pdf format.

Poster presentation by our group at the 2003 Integrated Nanoystems Research Facility Research Review.

2000 slides for presentation in Sante Fe, New Mexico.

2001 slides for presentation in Colorado Springs, CO.

To learn more view some of my slides in .pdf format.

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Last modified: 08/20/05