Advanced Semiconductor Devices II 

ECE217B, Spring 2002 (  Syllabus)

• Reference books • Homework • Lecture notes •

Graduate Course, 3 units

Professor & Class Schedule
Peter Burke
e-mail: pburke@uci.edu
Office: EG 2232
Schedule: MW 03:00-04:20  in CS 219
Office hours 4:30-5:30 pm  

Textbook:

Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMTs, William Liu, Wiley, ISBN 0-471-29700-3

Grade:

60% Homework, 40% End-of-term presentation

Course Outline

1.         Review of basic semiconductor physics and III-V materials
2.         Two-terminal devices
3.         HBT DC properties
4.         HBT high frequency properties
5.         FET DC properties
6.         FET high frequency properties
7.         Noise models
8.         Quantum devices: resonant tunneling diodes
9.         Nano-scale devices: Landauer-Buttiker formalism,
            single electron transistors, quantum point contacts, quantum dots,
            carbon nanotubes

The last topics will be the subject of my new course next year,
ECE 217C: Nanotechnology

Also to be covered, as needed by the class:

1.         Electromagnetic wave propgation in infinite media
2.         Coaxial and microstrip transmission lines
3.         S-parameters, reflections, impedances, gains, and Smith chart

Send mail to Peter Burke with questions or comments about this web site.
Last modified: 08/20/05