ECE217C: Nanotechnology 

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ECE278: Lasers ECE 217B: Devices ECE113A ECE275B: Lasers ECE217C: Nanotechnology Nano 04 EECS285B:Lasers Nano05 Nano06 EECS277C EECS277B: Devices LORs Nano08

Nanotechnology

ECE217C, Spring 2003

Graduate Course, 3 units

    Syllabus

Coordinator and schedule:

Peter Burke
e-mail: pburke@uci.edu
Office: EG 2232
This class meets for two 80 minute
lectures per week.

 

Pre-requisite

Physics 51A and 113A or consent of instructor. (Design units:0). 

Course Description

Fabrication and characterization techniques of electrical circuit elements at the nanometer scale. Quantized conductance, semiconductor quantum dots, single electron transistors, molecular wires, carbon nanotubes, self-assembly of nano-circuit elements, quantum methods of information processing.                                                                                

Course Objectives

At the conclusion of this course, the students should be able to understand
1) Electrical conduction at the nanometer scale, and its quantization
2) Fabrication techniques of nanometer sized electrical devices.
3) Characterization techniques of nanometer sized electrical devices.

Lecture notes (drafts)

Lecture 1: Introduction
Lecture 2: Nanofabrication and characterization
Lecture 3: Quantum particle in a box
Lecture 4: Tunnel junctions
Lecture 5: Coulomb blockade
Lecture 6: Single electron island
Lecture 7: Double tunnel junction
Lecture 8: Single electron transistor
Lecture 9: Two dimensional electron gas (2DEG)
Lecture 10: Nanowires, quantization of electrical resistance
Lecture 11: Quantum point contact
Lecture 12: Quantum dots; molecular electronics
Post-midterm reading list (partial)
Lecture 13: Carbon nanotubes

Homeworks:
 

Homework 1
Homework 2
Homework 3
Possible paper topics
Homework 4 (due June 6, 2003 @ 5 p.m.)

 

Course Outline

Week 1 – Introduction to nanoscale systems. Length, energy, and time scales.

Week 2 – Top-down approach to nanolithography. Spatial resolution of optical, deep-ultraviolet, x-ray, electron beam, and ion beam lithography.
 
Week 3 – Single electron transistors, coulomb blockade effects in ultra-small metallic tunnel junctions.

Week 4 – Quantum confinement of electrons in semiconductor nanostructures:
two-dimensional confinement (quantum wells). Band gap engineering. Epitaxy.

Week 5 – Landauer-Buttiker formalism for conduction in confined geometries.

Week 6 – One-dimensional confinement: quantum point contacts, quantum dots.

Week 7 – Bottom-up approach. Chemical self-assembly, carbon nanotubes.

Week 8 – Molecular electronics. Self-assembled monolayers. Electrochemical techniques; applications in biological and chemical detection.
 
Week 9 – Atomic scale characterization techniques: scanning tunneling microscopy, atomic force microscopy.

Week 10 – Introduction to quantum methods of information processing.
 

Required Text Books

There is no required text. There will be a set of handouts at the copy center at the beginning of the quarter.

Optional Text Books

Additional handouts will be provided from the following books:
David Ferry, Transport in Nanostructures, Cambridge University Press, 2000.

Y. Imry, Introduction to Mesoscopic Physics, Oxford University Press, 1997.
S. Datta, Electron Transport in Mesoscopic Systems, Cambridge University Press, 1995.
H. Grabert and M. Devoret, Single Charge Tunneling, Plenum Press, 1992.
Beenaker and Van Houten, Quantum Transport in Semiconductor Nanostructures, in Solid State Physics v. 44, eds. Ehernreich and Turnbull, Academic Press, 1991.
P. Rai-Choudhury, Handbook of Microlithography, Micromachining & Microfabrication, SPIE, 1997.

Computer Usage:      Computer usage is not required.

Laboratory Projects: None.

Flier

Send mail to Peter Burke with questions or comments about this web site.
Last modified: 07/06/11